ZTX214C : PNP Silicon Planar Low Noise Transistor: -30v, -0.2a. Absolute Maximum Ratings Ta=25☌ unless otherwise noted Symbol VCBO VCEO VEBO PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Value Units mW ☌ Symbol ICBO IEBO hFE1 hFE2 VBE (on) VCE (sat) fT Cob NL Parameter. KSC2784 : NPN Epitaxial Silicon Transistor. This superior performance in the VHF and UHF ranges has been optimised. The is a new hyperabrupt SOT23 packaged dual common cathode varactor diode, offering users both compact circuit design and impressive performance comprising tightly controlled CV characteristics, a capacitance of typically 2V,excellent phase noise performance and high of 200 min. Type Package Marking Code Basic ordering unit (pieces) T2R 8000 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO -15 VCEO -12 -6 VEBO -500 IC Collector current -1.0 ICP 150(TOTAL) PC Power dissipation Tj 150 Junction.įCQ20A06 : Device = SBD Ripetitive Peak Reverse Voltage(V) = 60 Average Rectified Current(A) = 20 Condition(cace or Ambient Temperature) = Tc=111 Surge Forward Current(A) = 150 Maximam Operating Junction Temperature( C ) = 150 Storage Temperature( C ) = -40 to 150 Peak Forward Voltage(V) = 0.65 Peak Forward Current(A) = 10 Peak Reverse.įSD270 : Hyperabrupt Varactor Diode. 2) Mounting cost and area can be cut in half. ! 1) Power switching circuit in a single package. hFE = 2500 (Typ) = 4.0 Adc CollectorEmitter Sustaining Voltage 100 mAdc VCEO(sus) = 60 Vdc (Min) = 80 Vdc (Min) 2N6388 Low CollectorEmitter Saturation Voltage VCE(sat) = 2.0 Vdc (Max) = 5.0 Adc 2N6387, 2N6388 Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors.ĮMF6. designed for generalpurpose amplifier and lowspeed switching applications. VHT330M250 : 105¡æc Aluminum ElectrolyticĢN6387 : Power 8A 80V Darlington NPN, Package: TO-220, Pins=3. NPR10M63 : Non−polar Aluminum Electrolyticĥ031SM : Zener Diode, 300mw ¡❥% Tolerance VHT4700M50 : 105¡æc Aluminum Electrolytic NPR2.2M50 : Non−polar Aluminum Electrolytic NLE-S1R0M504X5F : Miniature Aluminum Electrolytic Capacitors Maximum Recurrent Peak Reverse Voltage PRV = 200V. NTE5311 : Single Phase Bridge Rectifier, 4A. NTE3068 : NTE3068 Thru NTE3071, 0.4" Single Digit Numeric Display Seven Segment, RHDP NTE36MP NTE36 (NPN) & NTE37 (PNP), Silicon Complementary Transistors af Power Amplifier, High Current Switch NTE369 NTE369, Silicon NPN Transistor TV Vertical Deflection, Switch NTE36 Silicon Complementary Transistors af Power Amplifier, High Current Switch NTE36 NTE36 (NPN) & NTE37 (PNP), Silicon Complementary Transistors af Power Amplifier, High Current Switch NTE3470 NTE3470, Integrated Circuit Floppy Disk Read Amplifier System Some Part number from the same manufacture NTE Electronics, Inc. Pulse Test: Pulse Width = 150µs, Duty Cycle = 5%. 6☌/WĮlectrical Characteristics: (TC = +25☌ unless otherwise specified) Parameter Breakdown Voltage Emitter to Base Breakdown Voltage Collector to Base Breakdown Voltage Collector to Emitter Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Output Power Collector Efficiency Symbol Test Conditions Min Typ Max Unit W % V(BR)EBO = 0 V(BR)CBO = 0 V(BR)CEO = 50mA, RBE = ICBO IEBO hFE PO C VCB = 0 VEB = 0 VCE = 100mA, Note 1 VCC = 13.5V, Pin = 175MHz 100☌/W Thermal Resistance, JunctiontoCase, RthJC. to +175☌ Thermal Resistance, JunctiontoAmbient, RthJA. 35V CollectorEmitter Voltage (RBE = VCEO. Features: D High Power Gain: Gpe 7.5dB (VCC 175MHz) D Ability to Withstand more than 20:1 VSWR Load when Operated at: VCC = 175MHz Application: to 14 Watt Output Power Amplifiers in VHF Band Mobile Radio Applications Absolute Maximum Ratings: (TC = +25☌ unless otherwise specified) CollectorBase Voltage, VCBO. Description: The is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications.
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